While graphene has attracted a great deal of research due its remarkable electronic and mechanical properties, the difficulty of inducing an appreciable bandgap limits its use in nanoelectronic applications, particularly as a logic device. Graphene based heterostructures, combining graphene with other two dimensional materials, have been recently proposed in order to overcome this limitation. Particularly attractive are insulating hexagonal boron nitride (h-BN) or semiconducting transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2). The hybridisation of graphene with other two dimensional materials opens up the possibility of engineering the band gap and realising synthetic two-dimensional alloys and topological insulators.
Funding / Grants
- Centre for Materials Science, Queensland University of Technology (2020 - 2023)
- Dr Mahnaz Shafiei
- Associate Professor Jennifer MacLeod
- Associate Professor Josh Lipton-Duffin
- Dr Jonathan Bradford
- Associate Professor Dongchen Qi
- Jonathan Bradford, Mahnaz Shafiei, Jennifer MacLeod, Nunzio Motta (2019) Transfer‐Free Synthesis of Lateral Graphene–Hexagonal Boron Nitride Heterostructures from Chemically Converted Epitaxial Graphene. Advanced Materials Interfaces, .
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- Gupta B, Placidi E, Hogan C, Mishra N, Iacopi F, Motta N (2015) The transition from 3C SiC (1 1 1) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy. Carbon, 91, p378-385, SJR: 2.109 [Q1], IF: 6.198, .
- Zarotti F, Gupta B, Iacopi F, Sgarlata A, Tomellini M, Motta N (2016) Time evolution of graphene growth on SiC as a function of annealing temperature. Carbon, 98, p307-312, SJR: 2.109 [Q1], IF: 6.198, .
- Gupta B, Notarianni M, Mishra N, Shafiei M, Iacopi F, Motta N (2014) Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV. Carbon, 68, p563-572, Cites: 22, SJR: 2.109 [Q1], IF: 6.198, .