The thermal graphitisation of bulk SiC involves heating the sample to temperatures between 1200 and 1600 ˚C, resulting in the thermal decomposition of the surface. At these temperatures, the silicon sublimates from the surface, while the remaining carbon atoms undergo diffusion and nucleation to form the epitaxial graphene layers.
The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on bulk SiC for cost reduction and to better integrate the material with Si based electronic devices.
If you want to know more:
Growing Graphene on Semiconductors Edited by N.Motta, F.Iacopi, C.Coletti
Pan Stanford publishing (30-06-2017)
Print ISBN: 9789814774215e Book ISBN: 9781315186153