Project dates: 2022 - Ongoing
This research focuses on the growth of 2D diamond-like material (diamane) on silicon carbide substrate from precursor epitaxial graphene.
2D diamond (“diamane”) is the natural development of graphene to develop a 2D semiconductor material. Similar in some ways to graphene, it promises excellent electrical and material properties. These electrical properties could be explored comprehensively if diamane is grown on a semiconductor such as silicon carbide.
The conversion of self-standing graphene into diamane has been accomplished by Bakharev and colleagues using fluorination at moderate pressures and temperatures. However, to exploit the properties of the new material in micro and nanoelectronics it is imperative to demonstrate the growth on a substrate compatible with the requirements of the electronic industry like SiC.
We are pursuing this goal by exposing epitaxial graphene to Hydrogen in UHV and to Fluorine gas in a special vessel at reduced atmospheric pressure.
The first results obtained by XPS at the Australian synchrotron are encouraging, demonstrating the presence of sp3 bonds after the exposure to Hydrogen and to Fluorine.
Funding / Grants
- Centre for Materials Science, Queensland University of Technology (2022 - 2025)
Chief Investigators
