Supervisory team: Prof. Nunzio Motta, Dr. Dongchen Qi, Dr. Joseph Fernando
Expected Starting date: June 2020.
Eligibility: The candidate must have a physics/material science background and some experience in surface science and/or growth and characterization of graphene and two-dimensional materials. All the other standard entry requirements are listed on the QUT Ph.D. Scholarship website.
Description: In this project, we aim at growing new two dimensional (2D) heterostructures based on graphene epitaxially grown on insulating SiC. The realization of graphene-based 2D heterostructures on insulating substrates represents a major breakthrough in the field, paving the way to the development of industrial applications in nano-optics, nanoelectronics, and nano-electromechanical systems. Graphene will be grown on SiC by high-temperature annealing in a controlled atmosphere. After a thorough characterization of the surface atomic structure, electronic band structure and electronic properties via state-of-the-art surface science probes and synchrotron radiation spectroscopy, the stacking of 2D transition metal dichalcogenides (TMDCs, e.g. MoS2, WS2) by chemical vapor deposition will then enable us to create graphene-based 2D heterostructures with novel optical and electronic properties. These properties will be tested in real electronic and optoelectronic devices.
Contact: Prof. Nunzio Motta (email: email@example.com)