The cover is an EDX image of the patterned SiC substrate showing Ga contamination.
In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.
M. Amjadipour, J. Lipton-Duffin, F.Iacopi, and N.Motta Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage. Nanotechnology, 2017. 28(34): p. 345602. DOI: 10.1088/1361-6528/aa752e