Master of Philosophy
Ga2O3 is an emerging wide-bandgap semiconducting material that has received enormous attention in recent years. This is due to its potential application in power devices, UV detectors and military applications that are unattainable by conventional semiconductors such as silicon.
The operation and performance of these type of electronic devices rely critically on the surface quality and properties of the semiconducting materials. However, the surface atomic structures and electronic structures of Ga2O3 single crystals are not yet fully understood.
The principal aim of this project is to study the surface atomic structures and electronic structures of beta-Ga2O3 (001) surfaces using a combination of photoemission spectroscopy (PES) and scanning tunnelling microscope (STM). You will also explore how these properties will be modulated.
Through this project, you’ll be exposed to cutting-edge surface science equipment and working with an exciting new material system. This project is expected to lay the foundation for developing next-generation electronic devices based on emerging wide band-gap semiconductors.
The specific activities will be tailored to your study level and availabilities.
You will work in a well-established, highly-collaborative research group environment, using the most advanced instrumentation available at CARF, providing an effective and rich learning experience.
You will also benefit from an outstanding collaboration network including QUT researchers, international scientists and the principal supervisor, Dr. Dongchen Qi, who is an ARC Future Fellow and an expert in surface science and nanoscience.
Some of the research activities will include:
• studying the surface atomic structures and electronic structures of beta-Ga2O3 (001) surfaces
• studying the effect of vacuum annealing on the surface electronic structures and properties
• monitoring growth of novel surface acceptors.
Outcomes of the project include developing knowledge and skills in:
• surface science
• surface analysis
• device fabrication and characterisation.
We also expect to develop some prototype Ga2O3-based electronic devices.
Skills and experience
To be considered for this project, you must have:
• motivation and interest in scientific problems
• strong foundations in physics, chemistry or engineering
More specific skills will depend on your study level.