Single-layer 2D heterostructures on epitaxial graphene for future electronics

Future electronics through single layer 2D heterostructures on graphene

Study level

Master of Philosophy

Research Activities

In this project we aim at growing new two dimensional (2D) heterostructures based on graphene epitaxially grown on insulating SiC. The realisation of graphene-based 2D heterostructures on insulating substrates represents a major breakthrough in the field, paving the way to the development of industrial applications in nano-optics, nanoelectronics and nano-electromechanical systems.

Graphene will be grown on SiC by high temperature annealing in a controlled atmosphere. After a thorough characterisation of the surface atomic structure, electronic band structure and electronic properties via state-of-the art surface science probes and synchrotron radiation spectroscopy, the stacking of different 2D materials (including transition metal dichalcogenides, and 2D group 4 materials) will then enable us to create graphene-based 2D heterostructures with novel optical and electronic properties. These properties will be tested in real electronic and optoelectronic devices.


Condensed matter

Postdoctoral research fellow

PhD student

  • Negar Zebardastan
  • Michael Reynolds