Role in the Centre
As a physicist, Dongchen Qi’s research interests lie in the area of experimental condensed matter physics and surface science, focusing on creating, understanding, and controlling at nanoscale the surfaces and interfaces of functional materials to develop new technologies and material platforms for the next-generation devices. Within QUT’s Centre for Materials Science, Dongchen contributes to research programs that pioneer an interface engineering approach which will enable diamond-based nanoelectronics and energy-efficient quantum devices, which are bound to revolutionise a range of fields including power conversion, telecommunication and information storage and processing. Dongchen is particularly interested in using advanced synchrotron-based spectroscopic techniques to examine important interface phenomena essential to the function of electronic and energy devices, and he would like to extend this expertise in collaboration with other researchers in the Centre for Materials Science as well as across QUT’s other research centres.
During 1999 to 2003 Dr. Qi studied physics in Peking University for his undergraduate education before he moved to Singapore. After receiving his PhD degree in surface science from the National University of Singapore in 2009, he spent another two years as a research fellow at the same institute. In 2012, he joined the Institute of Materials Science and Engineering (IMRE) as a staff scientist working on organic electronic devices. He took up a faculty position as a lecturer in physics at La Trobe University in 2013. In 2017, Dr. Qi was awarded the prestigious ARC Future Fellowship to develop high-performance diamond surface electronics and quantum devices. In 2018, he joined the Queensland University of Technology as a Senior Lecturer. Since arriving in Australia, Dongchen has attracted more than $1.7M competitive funding. In addition, in the past six years his group has been awarded in total 3,000 hours merit-based beamtime at the Australian Synchrotron, representing an in-kind ANSTO grant value over $4M. Dongchen has authored over 112 refereed journal articles and 2 book chapters which are cited more than 4400 times, with an H-index of 33 (Google Scholar). He has been invited and keynote speakers at over 28 international conferences.
“MoO3 induces p-type surface conductivity by surface transfer doping in diamond” Xing, K.; Xiang, Y.; Jiang, M.; Creedon, D. L.; Akhgar, G.; Yianni, S. A.; Xiao, H.; Ley, L.; Stacey, A;. McCallum, J. C.; Zhuiykov, S.; Pakes, C. I.; Qi, D.-C. Applied Surface Science 2020, 509, 144890.
“Quantitative femtosecond charge transfer dynamics at organic/electrode interfaces studied by core-hole clock spectroscopy” Cao, L.; Gao, X.-Y.; Wee, A. T. S.; Qi, D.-C. Advanced Materials 2014, 26, 7880.
“The role of van der Waals forces in the performance of molecular diodes” Nerngchamnong, N.; Li, Y.; Qi, D.-C.; Jiang, Li; Thompson, D.; Nijhuis, C. A. Nature Nanotechnology 2013, 8, 113-118.
“Surface transfer doping of semiconductors” Chen, W.#; Qi, D.-C.#; X. Gao, X.; Wee, A. T. S. Progress in Surface Science 2009, 84, 279-321. #Equal contribution.
“Surface transfer doping of diamond (100) by tetrafluoro-tetracyanoquinodimethane” Qi, D.-C.; Chen, W.; Gao, X.; Wang, L.; Chen, S.; Loh, K. P.; Wee, A. T. S. J. Am. Chem. Soc. 2007, 129, 8084-8085.