Role in the Centre
Chao Zhang is a materials scientist and physicist with more than 10 years of hands-on experience with diverse nanomaterials and analyses using state-of-the-art in situ transmission electron microscopy (TEM) at atomic scale, for applications including secondary batteries, flexible electronics and optoelectronics. Within the Centre, Chao is a project leader for secondary batteries and in situ TEM. His research interest is focused on using high-resolution TEM at atomic scale to understand the behaviours of direct band gap semiconductors, including the emerging inorganic halide perovskites ABX3 as well as traditional Si, Ge, CdS and ZnO. Unveiling mechanical, electrical, thermal and optical properties of the materials is vital for designing new types of flexible electronic and optoelectronic devices, such as solar cells, photodetectors, secondary ion batteries, LEDs, and thermoelectric units. Chao is specifically targeting the implementation of advanced analytical and operando TEM methods for solving emerging environmental problems, such as developing lead-free perovskite solar cells for green-energy solutions and applications.
Chao graduated from Huazhong University of Science and Technology in 2012, majoring in optoelectronics. He obtained a master’s degree in applied physics and a PhD in materials science from University of Tsukuba and National Institute for Materials Science (Japan). Chao joined the Australian Laureate Fellow Professor Dmitri Golberg’s team as a Research Fellow at QUT where he helped organise the new AUD$7M Inorganic Nanomaterials Laboratory. Chao has achieved strong international impact in the field of in situ TEM for analysing functional materials and has been invited and sponsored to be a speaker at several international conferences. He has also established a highly competitive track-record of top-quality research, with more than 45 peer-reviewed articles. Overall, 90% of these papers have been published in top 10% journals including 6 Nano Letters and 6 Advanced Materials. To date, Dr Zhang’s papers have been cited more than 1800 times with an h-index of 22. Chao is an active member of The Australian Microscopy & Microanalysis Society, The International Federation of Societies for Microscopy, and The Australian Nanotechnology Network.
“Recent progress of in situ transmission electron microscopy for energy materials” Zhang, C.; Firestein, K.; Fernando, J.F.S.; Siriwardena, D.P.; Von Treifeldt, J.; Golberg, D. Adv. Mater. 2020, 32, 1901048.
“Mechanical, electrical and crystallographic property dynamics of bent and strained Ge/Si core-shell nanowires as revealed by in situ transmission electron microscopy” Zhang, C.; Kvashnin, D.G.; Bourgeois, L.; Fernando, J.F.S.; Firestein, K.; Sorokin, P.B.; Fukata, N.; Golberg, D. Nano Lett. 2018, 18, 7238-7246.
“Statistically analyzed photoresponse of elastically bent CdS nanowires probed by lightcompatible in situ High-Resolution TEM” Zhang C.; Cretu, O.; Kvashnin, D.; Kawamoto N.; Mitome N.; Wang X.; Bando Y.; Sorokin P.; Golberg D. Nano Lett. 2016, 16(10), 6008-6013.
“Amorphous phosphorus/nitrogen-doped graphene paper for ultrastable sodium-ion batteries” Zhang, C.; Wang, X.; Liang, Q.; Liu, X.; Weng, Q.; Liu, J.; Yang, Y.; Dai, Z.; Ding, K.; Bando, Y.; Golberg, D. Nano Lett. 2016, 16(3), 2054-2060.
“In situ fabrication and optoelectronic analysis of axial CdS/p-Si nanowire heterojunctions in a high-resolution transmission electron microscope” Zhang, C.; Xu, Z.; Tian, W.; Wang X.; Bando, Y.; Fukata, N.; Golberg, D. Nanotechnology 2015, 26, 154001-8.